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august 1999 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp40xxl1aj/bj vlv overvoltage protectors tisp4015l1aj, tisp4030l1aj, TISP4040L1AJ tisp4015l1bj, tisp4030l1bj, tisp4040l1bj very low voltage bidirectional thyristor overvoltage protectors device symbol low capacitance ?015 ................................................................................... 28 pf ?030 ................................................................................... 27 pf ?040 ................................................................................... 23 pf digital line signal level protection - isdn - xdsl safety extra low voltage, selv, values sma package (top view) description these devices are designed to limit overvoltages on digital telecommunication lines. overvoltages are normally caused by a.c. p ower system or lightning flash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point prote ction and is typically used for the protection of transformer windings and low voltage electronics. the protector consists of a symmetrical voltage-triggered bidirectional thyristor. overvoltages are initially clipped by breakd own clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. this low-vo ltage on state causes the current resulting from the overvoltage to be safely diverted through the device. the device switches off when the di verted current falls below the holding current value. how to order device v drm v v (bo) v ?015 8 15 ?030 15 30 ?040 25 40 30 a ??series specified for: - itu-t recommendations k.20, k.45, k.21 - fcc part 68 and gr-1089-core wave shape standard i tsp a 2/10 s gr-1089-core 150 8/20 s iec 61000-4-5 120 10/160 s fcc part 68 65 10/700 s itu-t k.20/45/21 fcc part 68 45 10/560 s fcc part 68 35 10/1000 s gr-1089-core 30 available in sma and smb packages sma saves 25 % placement area over smb mdxxcce 12 r (b) t (a) smb package (top view) t(a) r(b) mdxxbgf 2 1 t r sd4xaa t erminals t and r correspond to the alternative line designators of a and b ............................................ ul recognized components *rohs directive 2002/95/ec jan 27 2003 including annex device package carrier ti sp40xxl1 sma / do -214ac j - b e nd (a j ) e m bo sse d t a pe r e e l e d (r) smb / do-214aa j - b e nd (b j ) tisp40xxl1ajr-s tisp40xxl1bjr-s i n sert x x val u e cor r e s p o nd i n g to p r otecti o n v o l t a g e s of 15 v , 30 v and 40 v. order as * r o h s c o m p l i a n t
august 1999 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp40xxl1aj/bj vlv overvoltage protectors absolute maximum ratings, t a = 25 c (unless otherwise noted) rating symbol value unit repetitive peak off-state voltage ?015 ?030 ?040 v drm 8 15 25 v non-repetitive peak on-state pulse current (see notes 1 and 2) i tsp a 2/10 s (telcordia gr-1089-core, 2/10 s voltage wave shape) 8/20 s (iec 61000-4-5, comb ination wave generator, 1.2/50 voltage, 8/20 current) 10/160 s (fcc part 68, 10/160 s voltage wave shape) 5/310 s (itu-t k.20/45/21, 10/700 s voltage wave shape) 5/320 s (fcc part 68, 9/720 s voltage wave shape) 10/560 s (fcc part 68, 10/560 s voltage wave shape) 10/1000 s (telcordia gr-1089-core, 10/1000 s voltage wave shape) 150 120 65 45 45 35 30 non-repetitive peak on-state current (see notes 1 and 2) i tsm a 20 ms (50 hz) full sine wave 16.7 ms (60 hz) full sine wave 0.2 s 50 hz/60 hz a.c. 2 s 50 hz/60 hz a.c. 1000 s 50 hz/60 hz a.c. 20 22 13 5 1.8 initial rate of rise of current (2/10 waveshape) di/d t 130 a/ s maximum junction temperature t jm 150 c storage temperature range t stg -65 to +150 c notes: 1. initially, the device must be in thermal equilibrium with t j =25 c. 2. the surge may be repeated after the device returns to its initial conditions. electrical characteristics, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d =v drm 5 a v (bo) breakover voltage di/dt = 0.8 a/ms ?015 ?030 ?040 15 30 40 v v (bo) impulse breakover voltage dv/dt = 1000 v/ s, linear voltage ramp, maximum ramp value = 500 v di/dt = 5a/ s, linear current ramp, maximum ramp value = 10 a ?015 ?030 ?040 34 50 63 v i (bo) breakover current di/dt = 0.8 a/ms 0.8 a i d off- state current v d = 6v v d = 13 v v d = 22 v ?015 ?030 ?040 2 a i h holding current i t = 5a, di/dt=+/-30ma/ms 50 ma
august 1999 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp40xxl1aj/bj vlv overvoltage protectors electrical characteristics, t a = 25 c (unless otherwise noted) (continued) c off off- state capacitance f=1mhz, v d =1v rms, v d =0 f=1mhz, v d =1v rms, v d =1v f=1mhz, v d =1v rms, v d =2v ?015 ?030 ?040 ?015 ?030 ?040 ?015 ?030 ?040 28 27 23 25 24 20 23 22 18 36 35 29 33 31 26 30 29 24 pf parameter test conditions min typ max unit thermal characteristics min typ max unit r ja junctio n to free air thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) , sma t a = 25 c, (see note 3) smb 125 120 c/w 265 mm x 210 mm populated line card, sma 4-layer pcb, i t = i tsm(1000) , t a = 25 c smb 60 55 note 3: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widt hs. parameter test conditions
august 1999 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp40xxl1aj/bj vlv overvoltage protectors parameter measurement information figure 1. voltage-current characteristic for t and r terminals all measurements are referenced to the r terminal -v v drm i drm v d i h i tsm i tsp v (bo) i (bo) i d quadrant i i switching characteristic +v +i v (bo) i (bo) v drm i drm v d i d i h i tsm i tsp -i quadrant iii switching characteristic pm4ac
august 1999 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp40xxl1aj/bj vlv overvoltage protectors typical characteristics figure 2. off-state current vs junction temperature t a ?ambient temperature ? c 0 50 100 150 i d off-state current - na 0.1 1 10 100 1000 10000 tc4lvc '4015l1 '4030l1 '4040l1 figure 3. normalized breakover voltage vs junction temperatu re t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized breakover voltage 0.95 1.00 1.05 1.10 tc4lve '4015l1 '4040l1 '4030l1 figure 4. on-state current vs on-sta te vo lt age v t ?on-state volt age ?v 23456 1 i t on-state current a 0.2 0.3 0.5 0.7 2 3 5 7 20 30 50 70 0.1 1 10 tc4lvb figure 5. normalized holding current vs junction temperatur e t j - junction temperature - c -25 0 25 50 75 100 125 150 normalized holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4lvd
august 1999 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp40xxl1aj/bj vlv overvoltage protectors typical characteristics figure 6. capacitance vs off-state voltage v off-state voltage - v d - 0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 5 10 20 30 c capacitance ?pf off ? 15 20 30 10 tc4l1aa '4040 '4030 t j = 25 c v d = 1 v '4015
august 1999 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp40xxl1aj/bj vlv overvoltage protectors rating and thermal information figure 7. non-repetitive peak on-state current vs current durati on t - current duration - s 0.01 0.1 1 10 100 1000 i tsm(t) - non-repetitive peak on-state current - a 1.5 2 3 4 5 6 7 8 9 15 20 30 10 ti4mai v gen = 600 vrms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c figure 8. v drm derating factor vs minimum ambient temperature t amin - minimum ambient temperature - c -35 -25 -15 -5 5 15 25 -40 -30 -20 -10 0 10 20 derating factor 0.95 0.96 0.97 0.98 0.99 1.00 ti4lva '4015l1 '4030l1 '4040l1
august 1999 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. applications information tisp40xxl1aj/bj vlv overvoltage protectors transformer protection tisp device voltage selection normally, the working voltage value of the protector, v drm , would be chosen to be just greater than the peak signal amplitude over the equipment temperature range. this would give the lowest possible protection voltage, v (bo) . this would minimize the peak voltage applied to the transformer winding and increase the time to core saturation. in high frequency circuits, there are two further considerations. low voltage protectors have a higher capacitance than high vo ltage protectors. the inductance of a transformer winding reduces considerably when the magnetic core material saturates. saturation occurs when the magnetizing current through the winding inductance exceeds a certain value. it should be noted that this is a different current to the transformed current component from primary to secondary. the standard inductance-current relationship is: where: l = unsaturated inductance value in h di = current change in a dt = time period in s for current change di e = winding voltage in v rearranging this equation and working large ? changes to saturation gives the useful circuit relationship of: a transformer winding volt-second value for saturation gives the designer an idea of circuit operation under overvoltage condit ions. the volt-second value is not normally quoted, but most manufacturers should provide it on request. a 50 v s winding will support rectangular voltage pulses of 50 v for 1 s, 25 v for 2 s, 1 v for 50 s and so on. once the transformer saturates, primary to secondary coupling will be lost and the winding resistance, rw, shunts the overvoltage protector, th1 - see figure 9. this saturated condition is a concer n for long duration impulses and a.c. fault conditions because the current capability of the winding wire may be exceeded. for example, if the on-state voltage of the protector is 1 v and the winding resistance is 0.2 ? , the winding would bypass a current of 1/0.2 = 5 a, even though the protector was in the low voltage condition. el di dt ---- - = ex x ? tl ? i = ( ( figure 9. transformer saturation ai4xao th1 t1 unsaturated l rw th1 t1 saturated figure 10 shows a generic protection arrangement. resistors r1 and r2, together with the overcurrent protection, prevent excess ive winding current flow under a.c. conditions. normally these resistors would only be needed for special cases, e.g. some t1/e1 designs. a lternatively, a split winding could be used with a single resistor connecting the windings. this resistor could be by-passed by a small capacit or to reduce signal attenuation. figure 10. transformer winding protection th1 signal t1 over- current protect ion line r1 r2 ai4xan overcurrent protection upstream from the overvoltage protector can be fuse, ptc or thick film resistor based. for very high fre quency circuits, fuse inductance due to spiral wound elements may need to be evaluated.
august 1999 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp40xxl1aj/bj vlv overvoltage protectors tisp device voltage selection (continued) so a higher voltage protector might be chosen specifically to reduce the protector capacitive effects on the signal. low energy short duration spikes will be clipped by the protector. this will extend the spike duration and the data loss time. a higher protector voltage will reduce the data loss time. generally, this will not be a significant factor for inter-conductor protection. however, clipping is significant for protection to ground, where there is continuous low-level a.c. common mode induction. in s ome cases the induced a.c. voltage can be over 10 v. repetitive clipping at the induced a.c. peaks by the protector would cause severe data c orruption. the expected a.c. voltage induced should be added to the maximum signal level for setting the protector v drm value. 2-wire digital systems typical systems using a single twisted pair connection are: integrated services digital network (isdn) and pair gain. signal level protection at the transformer winding is given by protectors th3 and th5. typically these could be tisp4015l1 type devices with a 15 v voltage protection level. two line protection circuits are given; one referenced to ground using th1 and th2 (left) and the other inter-wire using protec tor th4 (right) - see figure 11. for isdn circuits compliant to etsi etr 080:1993, ranges 1 and 2 can be protected by the following device types: tis p4095m3, tisp4095h3, tisp3095h3 (combines th1 and th2) and tisp7095h3 (combines th1, th2 and th4). ranges 4 through 5 can be protected b y: tisp4145m3, tisp4145h3, tisp3145h3 (combines th1 and th2) and tisp7145h3 (combines th1, th2 and th4). device surge requirement, h or m, will be set by the overcurrent protection components and the standards complied with. protection of just the d.c. feed to etsi ranges is covered in the tisp5xxxh3 data sheet. when loop test voltages exceed the normal d.c. feed levels, higher voltage protectors need to be selected. for two terminal pro tectors, for levels up to 190 v (135 v rms) the tisp4250, h3 or m3, can be used and for 210 v (150 v rms) the tisp4290, h3 or m3, can be use d. in pair gain systems, the protector v drm is normally set by the d.c. feed value. the following series of devices have a 160 v working voltage at 25 c: tisp4220m3, tisp4220h3, tisp3210h3 (combines th1 and th2) and tisp7210h3 (combines th1, th2 and th4). these devices can be used on 150 v d.c. feed voltages down to an ambient temperature of -25 c. where the subscriber equipment may be exposed to pots (plain old telephone service) voltage levels, protector th4 needs a higher working voltage of about 275 v. suitable device types are: tisp4350m3, tisp4350h3, tisp3350h3 (combines th1 and th2) and tisp7350h3 (combines th1, th2 and th4). the overcurrent protection for the overvoltage protector can be fuse, ptc or thick film resistor based. its a.c. limiting capab ility should be less than the ratings of the intended overvoltage protector. equipment complying with the year 2000 international k.20, k.21 and k.4 5 recommendations from the itu-t, may be required to demonstrate protection coordination with the intended primary protector. wit hout adding series resistance, a simple series fuse overcurrent protection is likely to fail the equipment for this part of the recommendat ion. if the d.c. feed consists of equal magnitude positive and negative voltage supplies, appropriately connected tisp5xxxh3 unidire ctional protectors could replace th1 and th2. 4-wire digital systems figure 11. 2-wire system ai4xal signal transformer coupled two-wire interface dc supply th5 th4 c2 t2 over- current protection line th1 th2 th3 over- current protection dc feed signal c1 t1 a typical system using a two twisted pair connection is the high-bit-rate digital subscriber line (hdsl) and the ??interface of isdn. figure 12 shows a generic two line system. hdsl tends to have ground referenced protection at both ends of the lines (th1, th2, th3 and th4). the isdn ??interface is often inside the premises and simple inter-wire protection is used at the terminating adaptor (th7 an d th8). in all cases, signal protection, th5, th6, th9 and th10, can be tisp4015l1 type devices with a 15 v voltage protection level.
august 1999 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp40xxl1aj/bj vlv overvoltage protectors 4-wire digital systems (continued) figure 12. 4-wire system ai4xam dc feed th 9 signal th10 signal transformer coupled four-wire interface th7 th8 t3 t4 over- current protection over- current protection line 1 line 2 over- current protection over- current protection th5 th 6 th1 th2 th 3 th4 dc supply signal signal t1 t2 for an hdsl d.c. feed voltage of 180 v or less and operation down to an ambient of -25 c, the following th1, th2, th3 and th4 protectors are suitable: tisp4250m3 or tisp4250h3, tisp3250h3 (combines th1 and th2 or th3 and th4) and tisp7250h3 (combines th1, th2 and th7 or th3, th4 and th8). possible overcurrent protection components are covered in the 2-wire digital systems clause. for isdn interfaces powered with 40 v (etsi, ets 300 012 1992) the following th1, th2, th3 and th4 protectors are suitable: tisp4070m3 or tisp4070h3 or tisp4070l3, tisp3070f3 or tisp3070h3 (combines th1 and th2 or th3 and th4) and tisp7070f3 or tisp7070h3 (combines th1, th2 and th7 or th3, th4 and th8). at the terminating adaptor, the th7 and th8 protectors do not ?ee?the d.c. f eed voltage and should be selected to not clip the maximum signal level. generally, the tisp40xxl1 series will be suitable. internal isdn lines are not exposed to high stress levels and the chances of a.c. power intrusion are low (etsi en 300 386-2 19 97). accordingly, the equipment port protection needs are at a lower level than ports connected to outside lines. home phone networking using the existing house telephone wiring, home phone networking systems place the local network traffic in a high band above t he pots and adsl (asymmetrical digital subscriber line) spectrum. local network rates are 1 mbps or more. to reject noise and harmonics, an in-line protection and 5 mhz to 10 mhz bandpass filter module is used for the equipment. these modules are available from magnetic comp onent manufacturers (e.g. bel fuse inc.) a typical circuit for the telephone line magnetics module is shown in figure 13. transformer t1 isolates the equipment from the house wiring. the isolated winding output is voltage limited by a very low-voltage protector, th1. with a di fferential voltage of about 12 v peak to peak, the tisp4015l1 could be used for th1. after filtering, connection is made to the differential trans ceiver of the processing ic. figure 13. home phone networking isolation/filter/protection circuit ai4xap th1 filter c1 t1 tip ring protection hrtrx+ hrtrx-
august 1999 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. mechanical data tisp40xxl1aj/bj vlv overvoltage protectors recommended printed wiring land pattern dimensions device symbolization code devices will be coded as below. as the device parameters are symmetrical, terminal 1 is not identified. carrier information for production quantities, the carrier will be embossed tape reel pack. evaluation quantities may be shipped in bulk pack or em bossed tape. sma land pattern mdxx bic 2.34 (. 092) 1.90 (.075) 2.16 (.085) dimensions are: millimeters (inches) smb land pattern mdxx bib 2.54 (.100) 2.40 (.095) 2.16 (.085) dimensions are: millimeters (inches) device symbolization code device symbolization code tisp4015l1aj 4015l tisp4015l1bj 4015l1 tisp4030l1aj 4030l tisp4030l1bj 4030l1 TISP4040L1AJ 4040l tisp4040l1bj 4040l1 package carrier standard quantity sma embossed tape reel pack 5 000 smb 3 000 ?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries.

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